? 2006 ixys all rights reserved ds99508e(04/06) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 250 a 500 v v gs(th) v ds = v gs , i d = 500 a 3.0 5.5 v i gss v gs = 30 v dc , v ds = 0 100 na i dss v ds = v dss 5 a v gs = 0 v t j = 125 c50 a r ds(on) v gs = 10 v, i d = 2.5 a 1.4 ? note 1 polarhv tm hiperfet power mosfet n-channel enhancement mode avalanche rated fast intrinsic diode ixfp 5n50pm v dss = 500 v i d25 = 3.2 a r ds(on) 1.4 ? ? ? ? ? t rr 200 ns symbol test conditions maximum ratings v dss t j = 25 c to 150 c 500 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 500 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c 3.2 a i dm t c = 25 c, pulse width limited by t jm 10 a i ar t c = 25 c5a e ar t c = 25 c15mj e as t c = 25 c 150 mj dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 30 ? p d t c = 25 c38w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c t sold plastic body for 10 s 260 c m d mounting torque 1.13/10 nm/lb.in. weight 4g g = gate d = drain s = source features l plastic overmolded tab for electrical isolation l fast intrinsic diode l international standard package l unclamped inductive switching (uis) rated l low package inductance - easy to drive and to protect advantages l easy to mount l space savings l high power density overmolded to-220 (ixtp...m) outline g d s isolated tab (electrically isolated tab) preliminary technical information
ixys reserves the right to change limits, test conditions, and dimensions. ixfp 5n50pm symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 2.5 a, note 1 3.0 4.7 s c iss 620 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 72 pf c rss 6.3 pf t d(on) 28 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 5 a 28 ns t d(off) r g = 30 ? (external) 65 ns t f 26 ns q g(on) 12.6 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 2.5 a 4.3 nc q gd 5.0 nc r thjc 3.3 c/w source-drain diode characteristic values (t j = 25 c unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 5 a i sm repetitive 15 a v sd i f = i s , v gs = 0 v, note 1 1.5 v t rr i f = 5 a, -di/dt = 100 a/ s, 200 ns q rm v r = 100 v, v gs = 0 v 0.15 c i rm 1a notes: 1) pulse test, t 300 s, duty cycle d 2 % ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 terminals: 1 - gate 2 - drain (collector) 3 - source (emitter) 123 isolated to-220 (ixtp...m) preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineer- ing lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimen- sions without notice.
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